|
Teaching courses:
Fundamentals of computer design in micro- and nanoelectronics
Computer-aided design systems for integrated circuits
Information Technology
Functional and circuit design of integrated circuits
Topological design of integrated circuits" for the specialties
Profiles:
Google Scholar
Scopus
Publons (Web of Science)
ResearchGate
BSUIR Repository
ORCID
РИНЦ
Education:
2005-2009 Technician (Minsk State Higher Radioengineering College, "Microelectronics").
2009-2012 Engineer (Belarusian State University of Informatics and Radioelectronics, "Micro- and Nanoelectronic Technologies and Systems").
2012-2013 Master of Engineering sciences (Belarusian State University of Informatics and Radioelectronics, "Solid-state electronics,
radio-electronic components, micro- and nanoelectronics, devices based on quantum effects").
2013-2016 Postgraduate Courses
2016 Researcher (Belarusian State University of Informatics and Radioelectronics, "Solid-state electronics, radio-electronic components,
micro- and nanoelectronics, devices based on quantum effects").
Professional Achievements:
Designed by the curriculum of the discipline "Fundamentals of computer design in micro- and nanoelectronics" and electronic resources for the academic disciplines "Fundamentals of computer design in micro- and nanoelectronics", "Functional and circuit design of integrated circuits" and "Topological design of integrated circuits" for the specialties "Micro- and nanoelectronic technologies and systems" and "Quantum information technologies".
One of the authors of the manual with the signature stamp of MO "Computer design of integrated circuits. Methods and software for device and technological modeling".
Since 2012, he has been the responsible executor and executor of projects and assignments of the state research programs, programs the Belarusian Foundation for Basic Research and business contracts with organizations of the Republic of Belarus.
Certificate of BSUIR (2017).
Past employment:
2012-2013 Electrical Engineer, Research Laboratory "Computer Projection of Micro- and Nanoelectronic Systems" (Research Laboratory 4.4)
2013-2019 Junior Researcher, Research Laboratory 4.4
2014-2018 Assistant, Department of Micro- and Nanoelectronics
2018 to the present Senior Lecturer, Department of Micro- and Nanoelectronics
2019 to the present Head of the Research Laboratory 4.4 of the research department of the Belarusian State University of Informatics and Radioelectronics (BSUIR)
Expertise and Scientific Activity:
Computer-aided design systems in microelectronics;
Technological and device modeling of electronic components of power electronics,
solar energy, as well as special-purpose and dual-use products, including those with increased radiation resistance;
Physic-topological (electrical) models of a device structure microelectronics,
taking into account the degradation of operational characteristics under the influence of penetrating radiation;
Computer-aided topological design for integrated circuits.
Languages available: German - Pre-Intermediate, English - Beginner.
Publications:
57 works were published, including more than 20 articles in scientific journals, reports were prepared and successfully presented at leading international scientific and technical conferences.
List of publications (Papers in refereed journals, 2015-2020)
1. Optimization of structural and technological parameters of the field effect Hall sensor / I. Lovshenko, V. Volchek, V. Stempitsky, Dao Dinh Ha, A. Belous, V. Saladukha // The International Conference on Advanced Technologies for Communications - 2015, Ho Chi Minh, Vietnam - P. 642-644.
(https://ieeexplore.ieee.org/document/7388410)
2. Интегральный трехмерный магнитометр на основе датчиков Холла, изготовленный по стандартной КМОП технологии / И.Ю. Ловшенко, Дао Динь Ха, В.С. Волчёк, М.С. Баранова, Д.Ч. Гвоздовский, В.Р. Стемпицкий // Доклады БГУИР. - 2016. - № 7 (101). - С. 167-171.(https://libeldoc.bsuir.by/handle/123456789/11356)
3. Биполярный транзистор с изолированным затвором, изготовленный в объемном кремнии и по технологии «Кремний на изоляторе» / И.Ю. Ловшенко, И. Шелибак, В.Р. Стемпицкий // Доклады БГУИР. - 2016. - № 8 (102). - С. 89-93.(https://libeldoc.bsuir.by/handle/123456789/11047)
4. Приборно-технологическое моделирование высокотемпературных диодов Шоттки / И.Ю. Ловшенко, Я.А. Соловьев, В.А. Солодуха, В.Р. Стемпицкий // Современные проблемы радиоэлектроники : материалы XX Всероссийской научно-технической конференции. - Красноярск: Сибирский федеральный университет, Институт инженерной физики и радиоэлектроники. - 2017. - С. 511-513. (http://efir.sfu-kras.ru/downloads/sbornik-spr-2017.pdf)
5. Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness / I. Lovshenko, O. Dvornikov, V. Stempitsky, V. Khanko // Proceedings of NDTCS-2017. - Minsk : BSUIR, 2017. - P. 150-155.(https://libeldoc.bsuir.by/handle/123456789/29062)
6. Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistor / I. Lovshenko, O. Dvornikov, V. Stempitsky, V. Khanko // Proceedings of NDTCS-2017. - Minsk : BSUIR, 2017. - P. 147-150.(https://libeldoc.bsuir.by/handle/123456789/29061)
7. Технологические и конструктивные решения высокочастотных, мощных и оптоэлектронных приборов на основе нитрида галлия / И.Ю. Ловшенко, В.С. Волчек, Дао Динь Ха, В.Т. Ханько, В.Р. Стемпицкий // Телекоммуникации: сети и технологии, алгебраическое кодирование и безопасность данных : сборник материалов Международного научно-технического семинара. - Минск: БГУИР, 2017. - С. 69-74.(https://libeldoc.bsuir.by/handle/123456789/30095)
8. Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures / I.Yu. Lovshenko, V.T. Khanko, V.R. Stempitsky // J. Materials Physics and Mechanics. - St.Petersburg :Institute of Problems of Mechanical Engineering, vol. 39. - No 1. - 2018. - P. 92-101.
(https://mpm.spbstu.ru/userfiles/files/MPM139_15_lovshenko.pdf)
9. Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure / I. Lovshenko, Dao Dinh Ha, Tran Tuan Trung, Nguyen Trong Quang, V. Khanko, V. Stempitsky. // The International Conference on Advanced Technologies for Communications - Hanoi, Vietnam, 2019. - P. 189-193.
(https://ieeexplore.ieee.org/document/8924508)
10. Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation / I. Lovshenko, V. Khanko and V. Stempitsky // ITM Web of Conferences 30, 10002 (2019). - P. 8.
(https://doi.org/10.1051/itmconf/20193010002)
11. Экстракция параметров компактных моделей элементной базы интегральных микросхем специального назначения / Ловшенко И. Ю., Стемпицкий В. Р., Шандарович В. Т. // Инфокоммуникационные и радиоэлектронные технологии. - Т. 2. - № 4. - 2019. - С. 456-465. (https://www.sevsu.ru/images/nauka/pechat/2019/icrt.2019.02.4.pdf)
12. Физико-топологическая модель полевого транзистора, учитывающая деградацию эксплуатационных характеристик при влиянии ионизирующего излучения / Ловшенко И. Ю., Стемпицкий В. Р., Шандарович В. Т. // Инфокоммуникационные и радиоэлектронные технологии. - Т. 2. - № 4. - 2019. - С. 466-475.
(https://www.sevsu.ru/images/nauka/pechat/2019/icrt.2019.02.4.pdf)
13. Нитрид-галлиевый транзистор с высокой подвижностью электронов с эффективной системой теплоотвода на основе графена / И.Ю. Ловшенко, В.С. Волчёк, В.Т. Шандарович, Дао Динь Ха // Доклады БГУИР. - 2020. - Т. 18, № 3. - С. 72-80.(https://libeldoc.bsuir.by/handle/123456789/39852)
14. Моделирование воздействия тяжелой заряженной частицы на электрические характеристики приборной структуры n-МОП-транзистора / И.Ю. Ловшенко, В.Р. Стемпицкий, В.Т. Ханько // 2020. - Т. 18, № 7. - С. 55-62.(https://libeldoc.bsuir.by/handle/123456789/41560)
|
