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Teaching courses:
Quantum mechanics and statistical physics.
Semiconductor devices and IC elements.
Computer-aided design systems for integrated circuits.
Computer modeling, calculation and design of micro- and nanoelectronic products.
Modeling of micro- and nanoelectronic devices.
Elements of nanoelectronics.
Registration of the results of scientific and engineering activities.
Profiles:
Google Scholar
BSUIR Repository
Scopus
Education:
1999 - Full Professor in Electronics and Microelectronics specialty.
1993 - DSc degree in Physics and Mathematics.
1982 - PhD degree in Physics and Mathematics.
1976 - Higher education in Radio Physics and Electronics, graduated with honors from Physics Department of Belarusian State University.
Awards:
"Honorary Award of Belarusian Science and Technology Committee" (1999).
Awarded with Gold and Silver honorary badges "For services to BSUIR".
SUMMARY OF POSITIONS HELD
1997 - present Acting Head of R&D Lab 4.1 "Physics of micro- and nanoelectronic devices", BSUIR.
1994 - present Professor of Microelectronics Department (renamed into Micro- and Nanoelectronics Department in 2005), BSUIR.
1983 Senior Researcher, Minsk State Radioengineering Institute (renamed into BSUIR in 1993).
1976 Junior Researcher, Belarusian State University.
FIELD OF EXPERTISE
Physics, simulation and modeling of devices and circuits of micro- and nanoelectronics; human brain.
PROFESSIONAL ACHIEVEMENTS
The most significant scientific results of the studies are:
•the theory of physical processes in a number of device structures of micro- and nanoelectronics, namely: I2L elements; single-electron transistors, chains and matrices of tunnel junctions; resonant tunneling structures and circuits; interference transistors; quantum wires; nanostructures operating on the principle of coherent transport with self-organization; devices including carbon nanotubes and graphene
•the methodology of multidimensional simulation of physical processes in elements and fragments of silicon ICs, taking into account the effects of heavy doping, self-heating, and environment temperature
•hierarchies of methods of numerical simulation and models of elements of silicon VLSI and ULSI
•models of device structures of nanoelectronics, operating on the effects of single-electron, resonant tunneling and quantum interference
•methodology for the automatic synthesis of compact equivalent circuits of semiconductor devices, device structures of micro- and nanoelectronics
•principles of systems development for simulation of semiconductor devices and micro- and nanoelectronics devices
•a full electronic interpretation of the human brain functioning
PROFESSIONAL MEMBERSHIPS
• member of two Councils for Doctoral Dissertations in the Republic of Belarus and the Russian Federation
• member of the Organizing Committee and Program Committees of four International conferences
• member of BSUIR Expert Council
• member of the Editorial Board of the university scientific journal "Doklady BGUIR"
• member of the Editorial Boards of five scientific and technical journals of the Russian Federation
Languages available: English - fluent
PUBLICATIONS
An author and coauthor more than 400 publications, including 7 monographs, 6 textbooks, and about 300 articles in peer-reviewed scientific journals.
List of some recent publications since 2015:
1.Абрамов И.И. Перспективы и проблемы создания сверхразума. Часть II // Нано- и микросистемная техника. - 2020. - Т.22, № 2. - С. 112-120.
2.Абрамов И.И. Перспективы и проблемы создания сверхразума. Часть I // Нано- и микросистемная техника. - 2020. - Т.22, № 1. - С. 46-56.
3.Абрамов И. И., Коломейцева Н. В., Лабунов В. А., Романова И. А., Щербакова И. Ю. Численное моделирование трехбарьерных резонансно-туннельных диодов на основе графена // Ural Radio Engineering Journal. - 2019. - Т.3, №4. - C. 343-355.
4.Абрамов И.И. Сознание человека, или возможности электроники. Часть III // Нано- и микросистемная техника. - 2019. - Т.21, № 9. - С. 555-574.
5.Abramov I. I., Labunov V. A., Kolomejtseva N. V., Romanova I. A., Shcherbakova I. Y. Simulation of graphene field-effect transistors and resonant tunneling diodes based on carbon nanomaterials // Proc. SPIE. - 2019. - Vol. 11022. - P. 110220F-1-11.
6.Абрамов И.И., Коломейцева Н.В., Лабунов В.А., Романова И.А., Щербакова И. Ю. Моделирование передаточных характеристик двухзатворных полевых графеновых транзисторов // Нано- и микросистемная техника. - 2018. - T.20, N 11. - С. 643-650.
7.Абрамов И.И., Коломейцева Н.В., Лабунов В.А., Романова И.А., Щербакова И. Ю. Моделирование полевых графеновых транзисторов с одним и двумя затворами в различных режимах функционирования // Нанотехнологии, разработка, применение: XXI век. - 2018. - №3. - C. 16-24.
8.Абрамов И.И. Сознание человека, или возможности электроники. Часть II // Нано- и микросистемная техника. - 2018. - T.20, № 6. - С. 368-384.
9.Абрамов И.И. Сознание человека, или возможности электроники. Часть I // Нано- и микросистемная техника. - 2018. - Т.20, № 5. - С. 308-320.
10.Абрамов И.И., Коломейцева Н.В., Лабунов В.А., Романова И.А. Моделирование полевых графеновых транзисторов с одним и двумя затворами // Нано- и микросистемная техника. - 2017. - T.19, № 12. - P. 714-721.
11.Абрамов И.И., Коломейцева Н.В., Лабунов В.А., Романова И.А. Моделирование резонансно-туннельных приборных структур на основе углеродных наноматериалов // Нанотехнологии, разработка, применение: XXI век. - 2017. - T. 9., №3- C. 3-11.
12.Abramov I. I., Labunov V. A., Kolomejtseva N. V., Romanova I. A. Simulation of field-effect transistors and resonant tunneling diodes based on graphene // Proc. SPIE. - 2016. - Vol. 10224. - P. 102240V-1-10.
13.Абрамов И.И. Перспективы использования наноэлектроники, наноматериалов и нанотехнологий в исследовании и медицине мозга человека // Нано- и микросистемная техника. - 2016. - T.18, №1. - C. 49-64.
14.Абрамов И.И. Основы моделирования элементов микро- и наноэлектроники. Монография. LAP LAMBERT Academic Publishing, Saarbrücken, Germany, 2016. 444 с.
15.Абрамов И.И., Коломейцева Н.В., Лабунов В.А., Романова И.А. Моделирование резонансно-туннельных диодов на основе графена на подложках различного типа // Нано- и микросистемная техника. - 2015. - № 11. - С. 3-10.
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