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Professional interests/researches
Semiconductor optics, semiconductor light emitters and UHF devices
Education, trainings, professional development
Born in 1961. In 1983, he graduated with honors from the Physics Department of the Belarusian State University. 1983-1986 - postgraduate studies at the Institute of Physics of the Academy of Sciences of the BSSR. 1997-1999 - doctoral studies at the B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus.
internships, advanced trainings:
BelGISS (2010) on the topic "Functioning of the quality management system in an educational institution"
RIHS (2015) on the topic "Fundamentals of the theory and methodology of pedagogical measurements"
RIHS (2021) on the topic "Fundamentals of computer graphics and web design"
Professional activity
From 1983 to 2007, he worked at the B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus, where he worked his way up from a trainee researcher to a principal researcher. The academic degree of Candidate of Physical and Mathematical Sciences (PhD) was awarded in 1988, Doctor of Physical and Mathematical Sciences - in 2000, the academic title of professor was awarded in 2005. In the period from 1993 to 2000, he worked at the Institute of Semiconductor Technology of the University of RWTH Aachen, Germany, in the framework of several international scientific projects. He started working at BSUIR since 2003 on a part-time basis, first at the department of the systems and devices of telecommunications, then at the department of information security. Since 2007 - Professor of the Department of information security, since 2008 until 2016 - Head of the Department of metrology and standardization, from 2016 to the present - Professor of the Department of information security.
Author/co-author of more than 260 scientific papers, including more than 130 scientific articles, of which more than 90 are in scientific journals, 10 inventions and patents. He has published 1 monograph, a number of reviews, 1 textbook classified by the Ministry of Education of the Republic of Belarus, a number of scientific and methodological works. h-index: 11.
Member of the Editorial Board of the international "Journal of Applied Spectroscopy", the journals"Reports of BSUIR"," Standardization", the Belarusian Encyclopedia for Schoolchildren and Students (volume IV), the UNIDO Expert Commission on nanotechnology problems.
Member of the Expert Council of the Higher Attestation Commission No. 33 (Physical and Mathematical Sciences: physics), the Council for the Defense of dissertations D02. 15. 05 at the BSUIR. He has supervised 5 Candidates of Sciences and 5 Masters of Sciences.
Academic activity
- Theoretical fundamentals of the of information and measurement technology (104 hours)
- Structure of infocommunication systems and networks (108 hours)
- Measuring signal processing devices (136 h)
- Theoretical metrology (180 hours)
- Metrology, standardization and certification in radio electronics (60 hours)
- Design of a measuring experiment (216 hours)
- Methods and instruments of measurement information processing (120 hours)
Main publications
1. Gladyshchuk À.À., Gurskii À.L., Parashchuk V.V., Yablonskii G.P., Gribkovskii V.P., Pendyur S.À., Talenskii Î.N. Influence of crystal thickness, temperature, uniaxial compression, polarity of the electrical pulse, and discharge interval on streamer discharges in cadmium sulfide. JAS, 1985, V.42, N.4, p.600-605.
2. Gladyshchuk À.À., Gurskii À.L., Parashchuk V.V., Yablonskii G.P. Optical modulation of streamer dischardes in semiconductors. Vestsi AN BSSR, ser. phys.-mat. sci., 1985, N 3, p.82-86. (in Russian)
3. Gladyshchuk À.À., Gurskii À.L., Parashchuk V.V., Yablonskii G.P. Effect of temperature and illumination on streamer discharges in cadmium sulfide and cadmium selenide single crystals. JAS, 1986, V.44, N.6, p.639-643.
4. Gribkovskii V.P., Gurskii À.L., Parashchuk V.V., Yablonskii G.P. Surface streamer dischardes in CdSSe single crystals. Âåñöi Vestsi AN BSSR, ser. phys.-mat. sci., 1986, N6, p.61-67. (in Russian)
5. Gladyshchuk À.À., Gurskii À.L., Oleshko V.I., Parashchuk V.V., Yablonskii G.P. Temperature dependence of crystallographic orientation of streamer discharges in cadmium sulphide in the range of 77-530 Ê. Soviet Physics Journal, 1987, V.30, N 10, p.124-128. (in Russian)
6. Gladyshchuk À.À., Gurskii À.L., Nikitenko V.A., Parashchuk V.V., Yablonskii G.P. Stimulated emission of sreamer discharges in ZnO single crystals at 300 Ê. Soviet journal of Quantum Electronics, 1987, V.14, N10, p.1983-1985. (in Russian)
7. Gribkovskii V.P., Gurskii A.L., Pashkevich G.A., Yablonskii G.P. Crystallographic orientation of electric discharges in TeO2 and LiNbO3 monocrystalls. Phys. Stat. Sol.(a), 1987, v.103, N 1, p.K153-K156.
8. Gladyshchuk A.A., Gurskii A.L., Nikitenko V.A., Parashchuk V. V., Tvoronovich L.N., Yablonskii G.P. Luminiscence of ZnO monocrystals at exñitation by streamer discharges and laser radiation. J. Lumin., 1988, v.42, N 1, p.49-55.
9. Gurskii A.L., Lutsenko E.V., Pashkevich G.A., Trukhan V.M., Yablonskii G.P., Yakimovich V.N. Crystallographic orientation of incomplete breakdown in ZnP2 and CdP2 monocrystals. Phys. Stat. Sol. (a), 1991, v.123, N1, p.K75-K78.
10. Gurskii A.L., Lutsenko E.V., Morozova N.K., Yablonskii G.P. Impurity luminescence of ZnS:Î single crystals at intense photo and streamer excitation. Physics of the solid state, 1992, V.34, N 11, p.3530-3536. (in Russian)
11. Gribkovskii V.P., Gurskii A.L., Yablonskii G.P., Gladyshchuk A.A., Lutsenko E.V., Morozova N.K., Shulga T.S. Crystallographic orienation of streamer discharges in ZnS and ZnSe single crystals. Semiconductors, 1992, V.26, N 11, p.1920-1927 (in Russian).
12. Gurskii A. L., Davydov S. V., Kulak I. I., Mitcovets A. I., Lutsenko E.V., Yablonskii G. P. Power and spatial characteristics of electron-beam-pumped semiconductor lasers // USA Technical Digest Series. - 1993. - Vol. 2 - P. 426-428.
13. Gurskii A. L., Lutsenko E.V., Mitcovets A. I., Yablonskii G. P. High-efficiency electron-beam-pumped semiconductor laser emitters // Physica B. - 1993. - Vol. 185, N 1-4. - P. 505-507.
14. Gribkovskii V. P., Gurskii A. L., Davydov S. V., Lutsenko E.V., Kulak I. I., Mitcovets A. I., Yablonskii G. P., Gremenok V. F. Semiconductor electron-beam-pumped lasers based on ZnCdS compounds // Jap. J. Appl. Phys. - 1993. - Vol. 32, Suppl. 32-3. - P. 521-523.
15. Gribkovskii V. P., Gurskii A. L., Lutsenko E.V., Kulak I. I., Mitcovets A. I., Yablonskii G. P. Electron-beam-pumped laser emitters with microrelief mirrors based on II-VI semiconductors // Advanced Materials for Optics and Electronics. -1994.- Vol. 4, N 5. - P. 365-371.
16. Lutsenko E.V., Gladyshchuk A.A., Gurskii A. L., Chekhlov O.V., Yablonskii G. P. Luminescence and stimulated emior]ion of radiation in cadmium telluride monocrystals in streamer discharge channels. JAS, 1994, V.60, N1-2, p.98-100.
17. Gribkovskii V. P., Gurskii A. L., Lutsenko E.V., Yablonskii G. P. Crystallographic orientation and light emission of streamer discharges in II-VI semiconductors // Advanced Materials for Optics and Electronics. -1994.- Vol. 4, N 5. - P. 373-380.
18. Taudt W., Wachtendorf B., Beccard R., Wahid A., Heuken M., Gurskii A. L., Vakarelska K. Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure MOVPE system // J. Cryst. Growth. - 1994. - Vol. 145, N 4. - P. 582-588.
19. Gurskii A. L., Gruzinskii V. V., Gavrilenko A. N., Kulak I. I., Mitcovets A. I., Yablonskii G. P., Scholl M., Heuken M. Electron-beam-pumped lasing in ZnSe epitaxial layers grown by metal-organic vapour phase epitaxy // J. Appl. Phys. - 1995. - Vol. 77, N 10. - P. 5394-5397.
20. Gurskii A. L., Vakarelska K., Taudt W., Wachtendorf B., Soellner J., Wahid A., Heuken M. Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxy // J. Cryst. Growth. - 1995. - Vol. 146, N 4. - P. 592-598.
21. Gurskii A. L., Gruzinskii V. V., Gavrilenko A. N., Kulak I. I., Mitcovets A. I., Yablonskii G. P., Scholl M., Heuken M. Electron beam pumped room temperature lasing of MOVPE-grown ZnSe // Material Science Forum. - 1995. - Vols. 182-184. - P. 323-326.
22. Gurskii A. L., Gavrilenko A. N., Lutsenko E.V., Yablonskii G. P., Taudt W., Wachtendorf B., Soellner J., Schmoranzer J., Heuken M. Quantum yield of band-edge emission between 77 and 300 K of undoped and nitrogen-doped ZnSe epilayers grown by MOVPE // Material Science Forum. - 1995. - Vols. 182-184. - P. 243-246.
23. Taudt W., Wachtendorf B., Hamadeh H., Lampe S., Gurskii A. L., Heuken M., Kutzer V., Heitz R., Gerscheid U., Hoffmann A. Low temperature growth and planar nitrogen doping of ZnSe in a plasma-stimulated LP-MOVPE system // Material Science Forum. - 1995. - Vols. 182-184. - P. 35-38.
24. Gurskii A.L., Vakarelska K., Taudt W., Heuken M. Optical and electrical properties of annealed ZnSe grown by MOVPE. // J. Appl. Spectrosc. -1996. -Vol. 63, N6. -P. 1031-1039.
25. Gurskii A.L., Lutsenko E.V., Yablonskii G.P., Kozlovsky V.I., Krysa A.B., Söllner J., Scholl M., Hamadeh H., Heuken M. Photo- and cathodoluminescence of ZnSSe quantum well heterostructures grown by MOVPE. // J.Cryst.Growth, 1996. -Vol.159, N 1-4. -P. 518-522.
26. Gurskii A.L., Lutsenko E.V., Yablonskii G.P., Kozlovsky V.I., Krysa A.B., Söllner J., Hamadeh H., Heuken M. Photoluminescence, cathodoluminescence and stimulated emission of MOVPE-grown epilayers and heterostructures based on ZnSSe and ZnMgSSe compounds. // J.Crystal Research and Technology, 1996. -Vol.31. -P.705-708.
27. Gurskii A.L., Gavrilenko A.N., Lutsenko E.V., Yablonskii G.P., Taudt W., Hamadeh H., Wachtendorf B., Söllner J., Schmoranzer J., Heuken M. Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers grown by metalorganic vapour phase epitaxy. // Phys. stat. sol. (b). -1996. -Vol. 193, N 1. -P.257-267.
28. Gurskii A.L., Taudt W., Lampe S., Hamadeh H., Sauerlander F., Germain M., Basilaveccia M., Evrard R., Yablonskii G.P., Heuken M. Optical and electrical properties of MOVPE grown ZnSe:N using triallylamine as a nitrogen precursor. // J.Cryst.Growth, 1997. -Vol.170, N 4. -P.533-536.
29. Yablonskii G.P., Gurskii A.L., Lutsenko E.V., Marko I.P., Hamadeh H., Soellner J., Taudt W., Heuken M. Optical-pumped lasing of doped ZnSe epilayers grown by MOVPE. // J.Cryst.Growth, 1997. Vol.174. -P. 763-767.
30. Gurskii A.L., Marko I.P., Yuvchenko V.N., Yablonskii G.P., Hamadeh H., Taudt W., Soellner J., Kalisch H., Heuken M. Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe. // J.Cryst.Growth, 1997. Vol.174. -P. 757-762.
31. Yablonskii G.P., Gurskii A.L., Lutsenko E.V., Marko I.P., Hamadeh H., Soellner J., Taudt W., Heuken M. Optical-pumped lasing of doped ZnSe epitaxial layers grown by metal-organic vapour-phase epitaxy. // Phys.stat.solidi (a), 1997. Vol.159, N 2. -P. 543-557.
32. Kalisch H., Hamadeh H., Mueller J., Yablonskii G.P., Gurskii A.L., Wojtok J., Xu J., Heuken M. MOVPE of ZnMgSSe heterostructures for optically pumped blue-green lasers. // J. of Electronic Materials, 1997. -Vol. 26, N 10. -P. 1256-1260.
33. Rakovich Yu.P., Gurskii A.L., Smal A.S., Gladyshchuk A.A., Hamadeh H., Yablonskii G.P., Heuken M. Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers. Physics of the solid state, 1998. -V.40, N 5. -P. 812-813.
34. Gurskii A.L., Yablonskii G.P., Marko I.P., Lutsenko E.V., Hamadeh H., Kalish H., Heuken M. Lasing and optical properties of MOVPE ZnSe/ZnMgSSe QW heterostructures at high optical excitation. // Appl. Phys. Lett. 1998. -Vol. 73, N 11. -P. 1496-1498.
35. Gurskii A.L., Lutsenko E.V., Yablonskii G.P., Hamadeh H., Kalisch H., Schineller B., Heuken M. Optical properties and lasing of ZnMgSSe/ ZnSSe/ZnSe heterostructures grown by MOVPE. // Materials Science and Engineering, 1998. -Vol. B51, N 1. -P. 22-25.
36. Gurskii A.L., Rakovich Yu.P., Karpuk M.M., Gladyshchuk A.A., Yablonskii G.P., Hamadeh H., Taudt W., Heuken M. Structure of free exciton luminescence spectra in heteroepitaxial ZnSe/GaAs. // J.Cryst.Growth. 1998. -Vol.184/185, N 1-4. -P.1100-1104.
37. 20. G.P.Yablonskii, A.L.Gurskii, E.V.Lutsenko, I.P.Marko, B.Schineller, A.Guttzeit, O.Schoen, M.Heuken, K.Heime, R.Beccard, D.Schmitz, H.Juergensen. Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapour phase epitaxy. // J. of Electronic Materials, 1998. -Vol. 27, N 4. -P. 222-228.
38. Gurskii A.L. Effect of delocalization of the donor states on the donor-acceptor recombination in zinc selenide. // J. Luminescence. -1999. -Vol. 82, N 2. -P.145-154.
39. Gurskii A.L. Electron-beam-excited lasers based on A2B6 compounds (review). // JAS -1999. -V. 66, N 5. -p. 674-696.
40. Gurskii A.L., Zholnerevich I.I., Kozlovskii V.I. Kulak I.I.,Lutsenko E.V., Mit’kovets A.I., Yablonskii G.P. Directionality and mode structure of radiation of semiconductor lasers with electron-beam pumping. // JAS -1999. -V.66, N 5. -P. 794-801.
41. Gurskii A.L. Voitikov S.V. Application of the quantum defect method to calculate the Huang-Rhys factor for recombination via non-hydrogenic donor and acceptor states. // Solid State Communs. - 1999. -Vol. 112, N 1. -P.339-343.
42. A.L. Gurskii, Yu. P. Rakovich, A. A. Gladyshchuk, G. P. Yablonskii, H. Hamadeh, W. Taudt, and M. Heuken. Free Exciton Spectra in Heteroepitaxial ZnSe/GaAs layers. // Phys. Rev. B, 2000, Vol. 61, N 15, p. 10314-10321.
43. A.L. Gurskii, H. Hamadeh, H. Koerfer, G. P. Yablonskii, T. V. Bezjazychnaja, V. M. Zelenkovski, M. Heuken, K. Heime. Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapour phase epitaxy. // J. of Electronic Materials, 2000, Vol. 29, N 4, p. 430-435.
44. A.L. Gurskii. Nature of impurity bands of the edge luminescence of highly doped compensated ZnSe:N. // J. Appl. Spectroscopy, 2000, Vol. 67, N 1, p.111-118.
45. A.L. Gurskii, S. V. Voitikov, H. Hamadeh, H. Kalisch, M. Heuken, K. Heime. The role of impurity bands and electron-phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe. // J. Cryst. Growth, 2000, Vol.214/215, N 1-4, p.567-571.
46. A.L.Gurskii, M. Germain, S. V. Voitikov, E. V. Lutsenko, I. P. Marko, V. N. Pavlovskii, B. Schineller, O. Schoen, M. Heuken, E. Kartheuser, K. Heime, G. P. Yablonskii. Near-band-edge recombination in GaN, GaN:Mg and GaN:Si between 12 and 650 K. // IPAP Conference Series, 2000, Nitride Semiconductors, p.591-594.
47. Marko I. P., Yablonskii G. P., Gurskii A. L., E. V. Lutsenko E. V, Kalisch H., Heuken M., Walther T. and Heime K.. Thermal stability of ZnMgSSe/ZnSe laser heterostructures. // Phys. Stat. Sol. (a), 185, No 2 (2001), p. 301 - 308.
48. Yablonskii G. P., Lutsenko E. V., Pavlovskii V. N., Marko I. P., Gurskii A. L., Zubialevich V. Z., Mudryi A. V., Schon O., Protzmann H., Lunenburger M. , Schineller B., Heuken M., Kalisch H., and Heime K.. Blue InGaN/GaN multiple quantum well optically pumped lasers with emission wavelength in the spectral range of 450-470 nm. // Appl. Phys. Lett. 29, No 13 (2001), p. 1953 - 1955.
49. G. P. Yablonskii, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, A. Szymakowskii, R. A. Jansen, A. Alam, Y. Dikme, B. Schineller, M. Heuken. Luminescence and stimulated emission from GaN on silicon substrates heterostructures. // Physica status solidi (a) 192, N 1, 54 - 59 (2002).
50. M. Germain, E. Kartheuser, A.L. Gurskii, E.V. Lutsenko, I.P. Marko, V.N. Pavlovskii, G.P. Yablonskii, K. Heime, M. Heuken, B. Schineller. Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN. // J.Appl. Phys, 91, N 12, p. 9827-9834 (2002).
51. E. V. Lutsenko, G. P. Yablonskii, V. N. Pavlovskii, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, K. Heime, R. H. Jansen, T. Walther, B. Schineller, and M. Heuken. Influence of pumping and inherent laser light on properties and degradation of ZnMgSSe/ZnSe quantum well heterostructures. // Phys. Stat. Sol. (a), Vol. 195, No. 1, p. 188 - 193 (2003).
52. I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov, S. V. Ivanov, P. S. Kop’ev, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii, Y. Dikme, H. Kalisch, A. Szymakowski, R. H. Jansen, B. Schineller, M. Heuken. Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers. // Semiconductors, 2004, V. 38, N 9, p. 1099-1104.
53. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaygorodov, S. V. Ivanov, P. S. Kop'ev, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, A. L. Gurskii, G. P. Yablonskii, Y. Dikme, H. Kalisch, A. Szymakowski, R. H. Jansen, B. Schineller, M. Heuken. Integration of Cd(Zn)Se/ZnSe and GaN-based lasers for optoelectronic applications in a green spectral range. // Physica status solidi (c) 2004, V. 1, N 4, p. 1030-1033.
54. G. P. Yablonskii, V. N. Pavlovskii, E. V. Lutsenko, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, A. Szymakowski, R. H. Jansen, A. Alam, B. Schineller, M. Heuken. Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures. // Appl. Phys. Lett. - Vol. 85, p.5158-5160.
55. G. P. Yablonskii, A. L. Gurskii, V. N. Pavlovskii, E. V. Lutsenko, V. Z. Zubialevich, T. S. Shulga, A. I. Stognij, H. Kalisch, A. Szymakowski, R. H. Jansen, A. Alam, B. Schineller, M. Heuken. Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates. // J. Cryst. Growth. V. 275 (2005). Iss. 1-2, P. e1733-e1738.
56. A.L. Gurskii, V. N. Pavlovskii, E. V. Lutsenko, V. Z. Zubialevich, G. P. Yablonskii, H. Kalisch, A. Szymakowski, R. H. Jansen, A. Alam, B. Schineller, M. Heuken. Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates. // J. Cryst. Growth. V 275 (2005). Iss.1-2, P. e1047-e1051..
57. A.L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, G. P. Yablonskii, R. Aleksiejunas, K. Jarasiunas, F. Letertre, B. Faure, B. Schineller, A. Alam, M. Heuken, Y. Dikme, H. Kalisch and R. H. Jansen. Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique. // Phys. Stat. Solidi (c), Vol. 2 (2005), Iss. 7, p.2724-2727.
58. A.L. Gurskii, V.N. Pavlovskii, E.V. Lutsenko, V.Z. Zubialevich, G.P. Yablonskii, H. Kalisch, A. Szymakowski, R.H. Jansen, A. Alam, B. Schineller, M. Heuken. Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates. // Journal of Crystal Growth, 2005, Vol. 275, Iss. 1-2, p. e1047-e1051.
59. G.P. Yablonskii, A.L. Gurskii, V.N. Pavlovskii, E.V. Lutsenko, V.Z. Zubialevich, T.S. Shulga, A.I. Stognij, H. Kalisch, A. Szymakowski, R. H. Jansen, A. Alam, B. Schineller, M. Heuken. Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates. // Journal of Crystal Growth, 2005, Vol. 275, Iss. 1-2, p. e1733-e1738.
60. A.L. Gurskii, E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich, G.P. Yablonskii, R. Aleksiejunas, K. Jarasiunas, F. Letertre, B. Faure, B. Schineller, A. Alam, M. Heuken, Y. Dikme, H. Kalisch and R. H. Jansen. Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique. // Phys. Stat. Solidi (c). 2005 Vol. 2, Iss. 7, p. 2724 - 2727.
61. E. V. Lutsenko, V. N. Pavlovskii, A. V. Danilchyk, K. A. Osipov, N. V. Rzheutskii, V. Z. Zubialevich, A. L. Gurskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, K. Kazlauskas, S. Juršėnas, S. Miasojedovas, A. Žukauskas, Y. Dikme, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken. Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE. // Phys. Stat. Sol. (a) V. 203, Iss. 7 (2006), Pages: 1759-1763.
62. S.V. Ivanov, I.V. Sedova, S.V. Sorokin, A.A. Sitnikova, A.A. Toropov, P.S. Kop'ev E.V. Lutsenko, A.V. Danilchyk, A.G. Voinilovich, V.Z. Zubialevich, A.L. Gurskii, G.P. Yablonskii. High-efficiency low-threshold optically-pumped green laser with single CdSe quantum-disk-sheet active region. // Phys. Stat. Sol. (ñ) V. 3, Iss. 4 (2006), p.1229-1232.
63. E.V. Lutsenko, A.L. Gurskii, V.N. Pavlovskii, V.Z. Zubialevich, G.P. Yablonskii I.V. Sedova, S.V. Sorokin, A.A. Toropov, S.V. Ivanov, P.S. Kop'ev. Optical properties of Cd(Zn)Se/ZnMgSSe heterostructures with fractional QD-like CdSe insertions at high excitation levels. // Phys. Stat. Sol. (ñ). V. 3, Iss. 4 (2006), p. 895-899.
64. E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovskii, V. Z. Zubialevich, G. P. Yablonskii, I. V. Sedova, S. V. Sorokin, A. A. Toropov, S. V. Ivanov, P. S. Kop'ev. Internal laser parameters and optical properties of CdSe quantum dot lasers of different design. // Phys. Stat. Sol. (ñ). V. 3, Iss. 4 (2006), p. 1233-1237.
65. E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, B. Schineller, M. Heuken. Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques. // Phys. Stat. Sol. (ñ). V.3, No. 6, 1935-1939 (2006).
66. S.V. Ivanov, O. Lublinskaya, I. Sedova, S. Sorokin, A. Sitnikova, A. Toropov, P. Kop'ev. E. Lutsenko, A. Voinilovich, A. Gurskii, G. Yablonskii. Correlation of CdSe QD array morphology, structure design and lasing properties of optically pumped green CdSe/ZnMgSSe lasers. // Phys. Stat. Sol. (a) V. 204 (2007), Issue 1, P. 251 - 256.
67. K. A. Osipov, V. N. Pavlovskii, E. V. Lutsenko, A. L. Gurskii, G. P. Yablonskii, S. Hartmann, A. Janssen, H.-H. Johannes, R. Caspary, W. Kowalsky, N. Meyer, M. Gersdorff, M. Heuken, P. van Gemmern, C. Zimmermann, F. Jessen, H. Kalisch and R. H. Jansen. Influence of thermal -NPDannealing on photoluminescence and structural properties of organic thin films. // Thin Solid Films 515 (2007) 4834-4837.
68. V.Z. Zubialevich, E. V. Lutsenko, V. N. Pavlovskii, A. L. Gurskii, A. V. Danilchyk, G. P. Yablonskii, M. B. Danailov, B. Ressel, A. A. Demidovich, J. F. Woitok, H. Kalisch, Y. Dikme, R. H. Jansen, M. Luenenbuerger, B. Schineller, M. Heuken. Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates. // JAS, 2008, V.75, N 1, p. 96-103.
69. E.V. Lutsenko, A.V. Danilchyk, N.P. Tarasuk, A. V. Andryieuski, V.N. Pavlovskii, A.L. Gurskii, G.P. Yablonskii, H. Kalisch, R. H. Jansen, Y. Dikme, B. Schineller, and M. Heuken. Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si. // Phys. Stat. Sol. (c), 2008, Vol. 5, N 6, p.2263-2266.
70. T. V. Bez’yazychnaya, V. M. Zelenkovskii, A. L. Gurskii, G. I. Ryabtsev. Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN latticeGaN. // Semiconductors, 2008, V. 42, N 11, p. 1255-1258.
71. A.G. Vainilovich, E. V.Lutsenko, N. P. Tarasuk, A.L.Gurskii et al. Internal parameters and optical properties of green II-VI heterostructure lasers with active region composed of multi-sheet electronically-coupled CdSe quantum dots. // Physica status solidi (c), 2010, Vol. 7, Iss. 6, P. 1691-1693.
72. Ò.V.Borbot’ko, S.E.Afanasenko, N.V.Rzheutskii, A.L.Gurskii. Influence of temperature on the optical properties of moisture-containing composite materials. Doklady BGUIR, 2011, N 2, p.58-61. (in Russian)
73. N.V.Rzheutskii, E.V.Lutsenko, V.N.Pavlovskii et al. Luminescence of GaN-based p-i-n structures grown on sapphire substrate. Doklady BGUIR, 2011, N6, p.19-25. (in Russian)
74. Ò.V.Borbot’ko, D.V.Stoler, T.A.Pulko et al. Influence of the content of powdered filler in composite materials on their optical properties. Doklady BGUIR. 2012. - N 3. - p. 12-16. (In Russian)
75. N.A.Peuneva, A.V.Gusinski, A.L.Gurskii. Microwave method for determining the dielectric properties of liquids. Doklady BGUIR. 2012. - N 5. - p. 46-50. (in Russian)
76. A.L.Gurskii, N.À.Peuneva. Improving the Accuracy of Determining the Shape of Optical Spectra by Eliminating Interference Effects Using Fourier Analysis. // JAS. 2013. V.80, N 4. - p. 628-629.
77. A.L.Gurskii, A.V.Gusinski, A.M.Kostrikin, M.Ju. Derjabina. Measuring microwave technology of the centimeter and millimeter range. // Nauka i innovacii, 2012, N 3. - p.22-24. (in Russian)
78. A.N.Luferov, A.V.Gusinski, A.N.Kostrikin, A.V.Voroshen’, S.S.Gurski, V.V.Bozhenkov, M.Ju.Derjabina, A.L.Gurskii. Measuring complex for verification and calibration of power meters in the frequency range 78.33-118.1 GHz. // Standartizacija, 2014, N 3, p.50-53. (in Russian)
79. À.V.Mudry, D.V.Zhivulko, A.L.Gurskii, M.V.Yakushev, R.W.Martin, W.J.Schaff. Radiation effects in thin heteroepitaxial indium nitride films under electron irradiation. // Vesti NAN Belarusi, ser. fiz.-mat. navuk, 2015, N 2, p.90-97. (in Russian)
80. À.L.Gurskii, L.I.Hurski. Ë.Ãóðñêèé, Ë.È.Ãóðñêèé. Group classification of elements and D. I. Mendeleev's periodic law. Doklady BGUIR. 2015. - N 8(94). - p. 38-44. (in Russian)
81. À.L.Gurskii, L.I.Hurski. The SO(4,2) group and symmetric properties of the Periodic system of elements by D. I. Mendeleev. Doklady BGUIR, 2016, № 4 (98), p.73-79. (in Russian)
82. Ì.V,Yarmolich, N.A.Kalanda, A.L.Gurskii, S.E.Demyanov, L.V.Kovalev, À.I.Galyas. Magnetism in nanoscale strontium ferromolybdate powders. Doklady BGUIR, 2016, № 3 (97), p. 63-68. (in Russian)
83. Ja. Macutkevich, Ju.Banis, A.V.Petrov, N.A.Kalanda, A.L.Gurskii, M.V.Yarmolich, A.A.Klimza, A.L.Zheludkevich, O.V.Ignatenko, P.P.Kuzhir. Electrophysical and dielectric properties of composites Pb0,85Zr0,53Ti0,47O3-Sr2FeMoO6-δ. Doklady BGUIR, 2016, № 6 (100), p. 11-16. (in Russian)
84. À.L.Gurskii, M.V.Masheda. Colorimetric characteristics of an arbitrary selection of LED emitters on the Belarusian market. Standartizacija, 2017, № 3, p.57-63. (in Russian)
85. À.L.Gurskii, N.A.Peuneva, A.M.Kostrikin. Using the cylindrical rod method and a vector circuit analyzer to determine the dielectric constant of materials in the microwave range. Doklady BGUIR. - 2019. - № 1 (119). - p. 56 - 61. (in Russian)
86. À.L.Gurskii, L.I.Hurski. On the 150th anniversary of the creation of the Periodic Table of Elements. Vesti National’noj akademii navuk Belarusi, - 2019. - V.55, № 2. - p. 242-254. (in Russian)
87. À.L.Gurskii, N.A.Peuneva, A.M.Kostrikin. The free space method using a vector circuit analyzer for determining the permittivity of materials at ultrahigh frequencies. Doklady BGUIR. - 2019. - № 4 (122). - p. 32-39. (in Russian)
88. À.L.Gurskii, N.A.Peuneva, A.M.Kostrikin. Estimation of the uncertainty of measurements of the dielectric permittivity of materials by the method of a cylindrical rod on a microwave. Metrologija i priborostroenie. - 2019. - № 2. - p. 30-34. (in Russian)
89. À.L.Gurskii, A.V.Krejdich, M.V.Masheda, S.V.Nikonenko. Spatial and color characteristics of the radiation of LED lamps. Doklady BGUIR. - 2019. - № 6 (124). - p. 55-61. (in Russian)
90. A.L.Gurskii, N.V.Mashedo. Color and spectral characteristics of white light emitting diodes and their variation during aging. Doklady BGUIR. - 2019. - № 7 (125). - p. 39-45.
91. A.L.Gurskii, N.A.Kalanda, M.V.Yarmolich, I.A.Bobrikov, S.V.Sumnikov, A.V.Petrov. Phase transformations during crystallization of a solid solution of strontium-substituted double perovskite. Doklady BGUIR. - 2019. - № 8 (126). - p.73-80. (in Russian)
92. Kalanda N.A., Yarmolich M.V., Petrov A.V., Gurskii A.L. et al. Sequence of phase transformations at the formation of the strontium chrome-molybdate compound. // Modern Electronic Materials. - 2019. V.5, № 2. - P.69-75.
93. Kalanda N.A., Gurskii A.L. Yarmolich M.V., Bobrikov I.A., Ivanshina Î.Yu., Sumnikov S.V., Petrov À.V., Maia F., Zhaludkevich A.L., Demyanov S.Å. Phase transformation during Sr2CrMoO6-δ synthesis. // Materials of Electronics Engineering. - 2020. - Ò.22, № 3. - p149-157.
94. Kalanda N.A., Yarmolich M.V., Kutuzau M., Gurskii A.L. et al. Degree of phase transformations in the conditions of polythermal synthesis of Sr2-xBaxFeMoO6-δ. // Vacuum. - 2020. -V.174, Iss. 4. - Ð.109196.
95. Gurskii A.L., Pevneva N.A., Kopshai A.A. Simulation of electromagnetic field distribution in the measuring cell for determining the dielectric permittivity of materials at microwave frequencies. Doklady BGUIR. -2020, № 6. -p. 75-80.
96. A.L.Gurskii, N.V.Mashedo. Interrelation between Colorimetric and Spectral Parameters of White Led Lamps. // JAS. - 2021. - V.87, № 6. - p.1124-1130.
97. Oxyde materials for micro- and nanoelectronics: symmetry, physical and chemical properties, technology. A.L. Gurskii, L.I. Hurski, S.E. Demyanov [et al.], Ed. by L.I. Hurski. - Minsk. Bestprint, 2020 - 705 pp. (in Russian)/
Awards
Winner of the Award of the National Academy of Sciences of Belarus in 2003 for the series of works "Blue - UV semiconductor lasers based on epitaxial layers and quantum-dimensional heterostructures of zinc selenide and gallium nitride".
In 2005 and 2011, he was awarded the personal allowance of the President of the Republic of Belarus for his outstanding contribution to the socio-economic development of the Republic.
Honorary Diplomas of the Ministry of Education of the Republic of Belarus (2011, 2019).
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